| Click
here for availability list |
| Advanced
Technology for Semiconductor Material Processing |
| Silicon
Wafer |
| Back
Side Polishing |
| • |
Back
side grinding, lapping and polishing
of processed wafer with pattern |
| • |
Back
side polishing of extremely thin
processed wafer with pattern |
| •DI
wafer |
| •Arsenic
dope wafer |
| •Other
special processing |
|
| Monitor/Dummy
Wafer Polishing |
| •Recycling
of used silicon wafer |
| •Manufacturing
of virgin monitor/dummy
wafer |
|
| Epitaxial
Layer Growing |
| •4 inch
and 5 inch wafer |
| •NBL
defusion |
|
|
| |
| Glass
Plate |
| Photomask
Substrate Glass Polishing |
| •Synthetic
quartz glass |
| •Soda
lime glass |
| •White
crown glass |
| •Recycling
of used synthetic |
|
| Special
Purpose Glass Polishing |
| •Synthetic
quartz wafer |
| •Soda lim
glass for pellicle film making |
| •Synthetic
quartz glass for pellicle film
making |
| •Non
alkali low expansion glass for
LCD |
|
|
New Material
| Broad Band
Related Material Polishing |
| •Back side
polishing and dicing of film coated
glass for DWDM filter |
| •Recycling
of DWDM filter glass |
| •Special
oxide wafer polishing |
|
| Sapphire Wafer
Polishing |
| •As sliced
wafer |
| •Epitaxial
wafer |
|
|
| |
Semiconductor Compounds
Wafer
| GaP
Wafer Polishing |
| •As
sliced wafer |
| •Epitaxial
wafer |
| •Wafer
processing(grooving, edge
grinding, etc.) |
| •Recycling
of used wafer |
|
| GaAs
Wafer Polishing |
| •As
sliced wafer |
| •Epitaxial
wafer |
| •Back
side polishing of processed
wafer with pattern |
| •Recycling
of used wafer |
|
|
| InP
Wafer Polishing |
| •As
sliced wafer |
| •Epitaxial
wafer |
| •Recycling
of used wafer |
|
|
| |
Technology
Coordination
| Film
Coating on Si Wafer |
| •Heat
oxidized film |
| •TEOS
film |
| •Nitride
film |
| •Metal
film(Al, Au, Cu, Sn,
etc.) |
| •Patterning
and etching |
| •Dicing |
|
| Si
Prime and Monitor/Dummy
Wafer |
| •4
inch to 12 inch prime
wafer |
| •4
inch to 12 inch monitor/dummy
wafer |
| •Recycling
of 4 inch to 12 inch
used monitor/dummy
wafer |
|
| Epitaxial
Layer Growing |
| •4
inch to 12 inch Si
wafer |
|
| Procurement
and Processing of
Special Material |
| •Si
plate |
| •Semiconductor
compounds wafer |
| •Sapphire
wafer |
| •Other
special material |
|
|
|
|
| Optical
Waveguide Layer on Silicon |
| |
| Underclaldding Layer
(Thermal Oxide) |
| Wafer
Size |
4/
6/ 8 inch |
|
| Refractive
Index |
1.44580
± 0.00005 @1550 nm
1.45835
± 0.00005 @ 633nm |
Measured
by SCI Film TEK4000
(Resolution: 0.00002) |
| Refractive
Index Uniformity (Sigma) |
0.00003
(typical) |
Measured
by SCI Film TEK4000 |
| Layer
Thickness |
Up
to 20 µm |
|
| SiO2
Thickness Uniformity |
<
1% |
|
| Wafer
BOW |
<
50 µm |
Equivalent
to bare Si wafer |
|
| |
| Core Layer (Ge-doped
Glass) |
| Wafer
Size |
4/
6 inch |
|
| Refractive
Index Difference (Delta) |
Up
to 1.5% |
Measured
by SCI Film TEK4000 |
| Refractive
Index Uniformity (Sigma) |
0.00003
(typical) |
Edge
exclusion: 15mm |
| Layer
Thickness |
Up
to 10 µm |
Measured
by SCI Film TEK4000 |
|
Thickness Uniformity |
±
2% (typical) |
Edge
exclusion: 15mm |
| Wafer
BOW |
<
60 µm |
|
|
| |
|
| Click
button below to Request for Quotation |
Click
here for availability list |
|
 Single
Layer, Multilayer, & Multiple Thin Layers |
| |
Photo-circuit
& Contact Hole |
| |
Metal
Mask |
| |
Typical
Thickness Tolerance |
|
Examples
of processed test wafers |
| |
|
|
| Single
Layer, Multilayer , & Multiple Thin Layers |
| Test wafer with photolithography is available
in multifarious type. Wafers with a single layer and multilayers
are usually applied for fabrication of photo- circuits.
Selection of thin films and thickness applied is based
on customer's specification. |
| |
|
Single layer examples
are shown below
|
| |
| Single Layer |
Thickness |
| SiO2 |
5,000 - 10,000(1µm),
20,000A(2µm) |
| SiN |
1,500A |
| P-TEOS |
15,000A(1.5µm) |
| Al-Cu |
5,000 -7,000A, 1,000A
underlain with TiN:500A |
| W-CVD |
5,000A underlain with
TiN: 140A and 1,000A |
| Plasma W |
1,000A |
|
| |
| Multilayer examples
are shown below |
| |
| Silicon substrate/Si02:20A/poly:1000A |
| Silicon substrate/SiO2:40A/poly:1000A/TiN:140A/W:500A/P-SiN:1500A
|
| Silicon substrate/SiO2:1000A/Ti:100A/TiN:500A/W-CVD:1000A/SiN:1500A |
| Silicon substrate/SiO2:100A/poly:1µm/P-TEOS:3000A |
| Silicon substrate/SiO2:20A/poly:1000A/ion
implant(B,P)/P-TEOS:500A |
| Silicon substrate/SiO2:40A/poly:1000A/WSi:1200A/SiN:1500A |
| Silicon substrate/P-SiN:1500A/BPSG:15000A(1.5µm) |
| |
| **Other multilayers can be fabricated
based on customer's specification. Thermal oxide with
thickness below 100A will be fabricated using rapid thermal
processor. CMP process is also applicable as an intermediate
process or as final process. |
| TOP
of the PAGE |
| Example of test wafer with multilayer
thin films photo-etched |
| 1. Apply thermal oxide |
 |
| 2. Apply photolithography |
 |
| |
| 3. Apply CVD Tungsten
|
| CVD
Tungsten : 7000A-8000A underlain with TiN: 140A
|
 |
| |
| 4. Apply CMP |
 |
| |
| 5. Apply Aluminum -
Copper Evaporation |
 |
| |
|
| 6. Apply selective photolithography |
 |
| TOP
of the PAGE |
| |
| Click
button below to Request for Quotation |
Click
here for availability list |
| Multiple thin layer |
| Multiple thin layers of the above materials
will be accepted for manufacturing with reasonable lead
time and price. Test wafer with 2-10 layers can be fabricated.
|
| |
| Metal mask |
| Design & manufacturing of metal masks
for test patterns will be accepted. |
| Lead time for Mask design & manufacturing
will take 2-3 months. |
| |
| 300mm test wafer |
| 300mm test wafer should be available
from time frame of 2002(Q3)-2003. |
| |
| TOP
of the PAGE |
| Photolithography
& Contact-hole |
| Manufacturing capability for photolithography(Lines
& Space) and contact hole is restricted by mfg line, equipment
and also wafer with thin films on. General information
regarding manufacturing capability is as shown below.
|
| |
| X-sectional view of photolithography
sample is shown below |
| |
|
Min |
Tolerance,
% |
| Line width |
0.25µm |
10 |
| Line spacing |
0.25µm |
10 |
| Contact hole diameter |
0.25µm |
10 |
|
| |
| Photoresist thickness(*) 800A |
| * I-line and KrF photoresists with a
various thickness are available. |
| |
| Metal
mask |
|
NetMotion can accept metal mask design
& fabrication (for test patterns) based on customer's
specification.
Metal mask fabrication lead time is 2-3 months including
design/review. Please call 1-800-790-7837 for more info.
|
| |
| Substrate
Material |
| For telecommunication and
wireless communications fields, NetMotion provides III-V
(GaP, GASb, InAs, InP, and InSb) and II-VI (CdTe, ZnTe,
ZnSe) compound semiconductor materials. |
| TOP
of the PAGE |
| Typical
thickness tolerance are shown as reference |
| Process Menu |
| |
Typical
Thickness |
Tolerance |
|
A or
µm |
% |
| Low
Pressure Chemical Vapor Deposition(LPCVD) SiN |
300
A |
3.2 |
|
2500
A |
2.7 |
| Plasma
SiN |
500
A |
1.9 |
|
1000
A |
2.2 |
|
5000
A |
4.2 |
|
1 µm |
3.0 |
| TiN |
1000
A |
3.9 |
|
|
|
| Thermal
SiO2 |
1000
A |
1.1 |
|
3000
A |
0.7 |
|
5000
A |
0.6 |
| High
Density Plasma(HDP) SiO |
7000
A |
7.1 |
| Titanium |
500
A |
3.5 |
| Al/Cu |
3300
A |
2.4 |
|
5000
A |
2.8 |
| Boron
Phosphate Silicade Glass(BPSG) |
2 µm |
5.2 |
| BPSG
with Anneal |
5000
A |
5.2 |
| BPSG
without Anneal |
1 µm |
5.2 |
| Non-Doped
Poly |
650
A |
1.6 |
|
4000
A |
1.2 |
|
| |
| Click
button below to Request for Quotation |
Click
here for availability list |
